Numerical schemes for semiconductors energy- ...
Document type :
Communication dans un congrès avec actes
Title :
Numerical schemes for semiconductors energy- transport models
Author(s) :
Bessemoulin-Chatard, Marianne [Auteur]
Laboratoire de Mathématiques Jean Leray [LMJL]
Chainais-Hillairet, Claire [Auteur]
Reliable numerical approximations of dissipative systems [RAPSODI]
Mathis, Hélène [Auteur]
Laboratoire de Mathématiques Jean Leray [LMJL]
Laboratoire de Mathématiques Jean Leray [LMJL]
Chainais-Hillairet, Claire [Auteur]
Reliable numerical approximations of dissipative systems [RAPSODI]
Mathis, Hélène [Auteur]
Laboratoire de Mathématiques Jean Leray [LMJL]
Conference title :
Finite Volumes for Complex Applications IX
City :
Bergen
Country :
Norvège
Start date of the conference :
2020-06-15
Journal title :
Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples (R. Klöfkorn, E. Keilegavlen, F. A. Radu, and J. Fuhrmann, eds.),
Publisher :
Springer, Cham
English keyword(s) :
energy-tranport model
finite volumes
entropy method
finite volumes
entropy method
HAL domain(s) :
Mathématiques [math]/Analyse numérique [math.NA]
English abstract : [en]
We introduce some finite volume schemes for unipolar energy-transportmodels. Using a reformulation in dual entropy variables, we can show the decay ofa discrete entropy with control of the discrete entropy dissipation.We introduce some finite volume schemes for unipolar energy-transportmodels. Using a reformulation in dual entropy variables, we can show the decay ofa discrete entropy with control of the discrete entropy dissipation.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Collections :
Source :
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