Title :

Molecular beam epitaxial growth of 2D-boron nitride on Ni substrates

Author(s) :

Hadid, Jawad [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Colambo, Ivy [Auteur]
University of the Philippines Los Baños [UP Los Baños]
Avila, Jose [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Plaud, Aexandre [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Université Paris Saclay, ONERA, CNRS, Laboratoire d'étude des microstructures (LEM)
Boyaval, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Deresmes, D. [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Nuns, Nicolas [Auteur]
Institut Michel Eugène Chevreul - FR 2638 [IMEC]
Institut des Molécules et de la Matière Condensée de Lille [IMMCL]
Dudin, Pavel [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Loiseau, Annick [Auteur]
DMAS, ONERA, Université Paris Saclay [Châtillon]
Université Paris Saclay, ONERA, CNRS, Laboratoire d'étude des microstructures (LEM)
Barjon, Julien [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Vignaud, Dominique [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]

Conference title :

22nd International Conference on Molecualr Beam Epitaxy

Conference organizers(s) :

University of Sheffield (UK)

City :

Sheffield

Country :

Royaume-Uni

Start date of the conference :

2022-09-04

Publication date :

2022

English keyword(s) :

boron nitride
borazine
molecular beam epitaxy
plasma-assisted

HAL domain(s) :

Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. Based on spatially resolved photoemission ...
Show more >2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. Based on spatially resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the two N and B main components and their relationship with an electronic coupling with Ni at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained although the material thickness is not homogeneous, showing triangular islands whose lateral size is limited to ~20 μm.Show less >

Language :

Anglais

Peer reviewed article :

Non

Audience :

Internationale

Popular science :

Non

ANR Project :

hBN/Graphene 2D Heterostructures: from scalable growth to integration

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL