Title :

Ultrahigh‐Flux X‐ray Detection by a Solution‐Grown Perovskite CsPbBr3 Single‐Crystal Semiconductor Detector

Author(s) :

Pan, Lei [Auteur]
Department of Chemistry [Northwestern University]
Liu, Zhifu [Auteur]
Northwestern University [Evanston]
Welton, Claire [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Klepov, Vladislav V. [Auteur]
Department of Chemistry [Northwestern University]
Peters, John A. [Auteur]
Northwestern University [Evanston]
De Siena, Michael C. [Auteur]
Department of Chemistry [Northwestern University]
Benadia, Alessandro [Auteur]
Department of Chemistry [Northwestern University]
Pandey, Indra [Auteur]
Argonne National Laboratory [Lemont] [ANL]
Department of Chemistry [Northwestern University]
Miceli, Antonino [Auteur]
Argonne National Laboratory [Lemont] [ANL]
Chung, Duck Young [Auteur]
Argonne National Laboratory [Lemont] [ANL]
Reddy, Manjunatha [Auteur]
Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Wessels, Bruce W. [Auteur]
Northwestern University [Evanston]
Kanatzidis, Mercouri G. [Auteur]
Department of Chemistry [Northwestern University]

Journal title :

Advanced Materials

Abbreviated title :

Advanced Materials

Volume number :

35

Publisher :

Wiley

Publication date :

2023-04-29

HAL domain(s) :

Chimie/Chimie inorganique

English abstract : [en]

AbstractSolution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite ...
Show more >AbstractSolution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite CsPbBr3 single‐crystal semiconductor detector capable of operating at ultrahigh X‐ray flux of 1010 photons s−1 mm−2 is reported. High‐quality solution‐grown CsPbBr3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr3/Au. A high reverse‐bias voltage of 1000 V (435 V mm−1) can be applied with a small and stable dark current of ≈60–70 nA (≈9–10 nA mm−2), which enables a high sensitivity larger than 10 000 µC Gyair−1 cm−2 and a simultaneous low detection limit of 22 nGyair s−1. The CsPbBr3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X‐rays with flux from 106 to 1010 photons s−1 mm−2. Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X‐ray and a lab X‐ray irradiated device. Solid‐state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution‐grown CsPbBr3 single crystal may be associated with its good short‐range order, comparable to the spectrometer‐grade melt‐grown CsPbBr3.Show less >

Language :

Anglais

Audience :

Internationale

Popular science :

Non

Administrative institution(s) :

Université de Lille
CNRS
Centrale Lille
ENSCL
Univ. Artois

Collections :

• Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181

Research team(s) :

RMN et matériaux inorganiques (RM2I)

Submission date :

2024-04-03T11:00:53Z