Effect of initial substrate conditions on ...
Type de document :
Article dans une revue scientifique: Article original
URL permanente :
Titre :
Effect of initial substrate conditions on growth of cubic silicon carbide
Auteur(s) :
Vasiliauskas, Remigijus [Auteur]
Marinova, Maya [Auteur]
Syväjärvi, Mikael [Auteur]
Liljedahl, R. [Auteur]
Zoulis, Georgios [Auteur]
Lorenzzi, Jean [Auteur]
Ferro, Gabriel [Auteur]
Juillaguet, Sandrine [Auteur]
Camassel, Jean [Auteur]
Polychroniadis, Efstathios K. [Auteur]
Yakimova, Rositza [Auteur]
Marinova, Maya [Auteur]
Syväjärvi, Mikael [Auteur]
Liljedahl, R. [Auteur]
Zoulis, Georgios [Auteur]
Lorenzzi, Jean [Auteur]
Ferro, Gabriel [Auteur]
Juillaguet, Sandrine [Auteur]
Camassel, Jean [Auteur]
Polychroniadis, Efstathios K. [Auteur]
Yakimova, Rositza [Auteur]
Titre de la revue :
Journal of Crystal Growth
Numéro :
324
Pagination :
7-14
Date de publication :
2011
Résumé en anglais : [en]
In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H–SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed ...
Lire la suite >In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H–SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed and covered by silicon layer and (iv) with (1 1 1) 3C–SiC buffer layer. Almost 100% coverage and low twin density was achieved when grown on the buffer layer. The XRD and TEM characterizations show better material quality when the layer is grown directly on 6H–SiC substrates. Background doping evaluated by LTPL is in the range of 1016 cm−3 for N and 1015 cm−3 for Al in all grown layers.Lire moins >
Lire la suite >In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H–SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed and covered by silicon layer and (iv) with (1 1 1) 3C–SiC buffer layer. Almost 100% coverage and low twin density was achieved when grown on the buffer layer. The XRD and TEM characterizations show better material quality when the layer is grown directly on 6H–SiC substrates. Background doping evaluated by LTPL is in the range of 1016 cm−3 for N and 1015 cm−3 for Al in all grown layers.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Collections :
Date de dépôt :
2019-06-17T08:43:24Z
2020-03-13T14:18:58Z
2020-03-13T14:18:58Z