Ultrafast (≈10 GHz) mid-IR modulator based ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
Ultrafast (≈10 GHz) mid-IR modulator based on ultrafast electrical switching of the light–matter coupling
Author(s) :
Malerba, Mario [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Pirotta, Stefano [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Aubin, Guy [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Lucia, L [Auteur]
Jeannin, M [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Manceau, J-M [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Bousseksou, A [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Lin, Q [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Lampin, Jean-Francois [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Barbieri, Stefano [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, L [Auteur]
School of Electronic and Electrical Engineering [Leeds]
Davies, A [Auteur]
School of Electronic and Electrical Engineering [Leeds]
Linfield, E [Auteur]
School of Electronic and Electrical Engineering [Leeds]
Colombelli, Raffaele [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Centre de Nanosciences et de Nanotechnologies [C2N]
Pirotta, Stefano [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Aubin, Guy [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Lucia, L [Auteur]
Jeannin, M [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Manceau, J-M [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Bousseksou, A [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Lin, Q [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Lampin, Jean-Francois [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Barbieri, Stefano [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, L [Auteur]
School of Electronic and Electrical Engineering [Leeds]
Davies, A [Auteur]
School of Electronic and Electrical Engineering [Leeds]
Linfield, E [Auteur]
School of Electronic and Electrical Engineering [Leeds]
Colombelli, Raffaele [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Journal title :
Applied Physics Letters
Publisher :
American Institute of Physics
Publication date :
2024-07-24
ISSN :
0003-6951
English keyword(s) :
Semiconductor heterostructures
Infrared radiation
Amplitude modulation
Optical resonators
Ultrafast technology
Infrared radiation
Amplitude modulation
Optical resonators
Ultrafast technology
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
We demonstrate a free-space amplitude modulator for mid-infrared radiation (λ ≈ 9.6 μm) that operates at room temperature up to at least 20 GHz (above the −3 dB cutoff frequency measured at 8.2 GHz). The device relies on ...
Show more >We demonstrate a free-space amplitude modulator for mid-infrared radiation (λ ≈ 9.6 μm) that operates at room temperature up to at least 20 GHz (above the −3 dB cutoff frequency measured at 8.2 GHz). The device relies on the ultrafast transition between weak- and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal–metal optical resonators, that—all-together—behave as an electrically tunable surface. At negative bias, it operates in the weak light–matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons, and the device transitions to the strong-coupling regime. The modulator transmission remains linear with input radio frequency power in the 0–9 dBm range. The increase in optical powers up to 25 mW exhibit a weak beginning of saturation a little bit below.Show less >
Show more >We demonstrate a free-space amplitude modulator for mid-infrared radiation (λ ≈ 9.6 μm) that operates at room temperature up to at least 20 GHz (above the −3 dB cutoff frequency measured at 8.2 GHz). The device relies on the ultrafast transition between weak- and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal–metal optical resonators, that—all-together—behave as an electrically tunable surface. At negative bias, it operates in the weak light–matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons, and the device transitions to the strong-coupling regime. The modulator transmission remains linear with input radio frequency power in the 0–9 dBm range. The increase in optical powers up to 25 mW exhibit a weak beginning of saturation a little bit below.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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