Title :

Improvement and optimization of Cu 2 ZnSn(S1-xSex)4 structure for optoelectronic applications

Author(s) :

Skender, A [Auteur]
Université Saâd Dahlab Blida 1 [UB1]
Aissat, A [Auteur]
Université Ahmed Draia
Université Saâd Dahlab Blida 1 [UB1]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]

Journal title :

Chalcogenide Letters

Pages :

651-653

Publisher :

National Institute of Materials Physics, National Institute of Optoelectronics

Publication date :

2024-08

ISSN :

1584-8663

English keyword(s) :

Materials Semiconductors Thin films Solar cell Photovoltaic Optoelectronics
Materials
Semiconductors
Thin films
Solar cell
Photovoltaic
Optoelectronics

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

<div><p>The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu 2 ZnSn(S 1-x Se x ) 4 have recently attracted ...
Show more ><div><p>The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu 2 ZnSn(S 1-x Se x ) 4 have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu 2 ZnSn(S 1-x Se x ) 4 with Cu 2 NiGeS 4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 for near-infrared wavelengths, and both extinction and absorption coefficients are from 0.478 to 0.211 and from 7.956×10 4 to 6.912×10 4 cm -1 , respectively, for almost along the visible spectrum. Additionally, the bandgap energy of Cu 2 ZnSn(S 1-x Se x ) 4 in kesterite structure increases from 1.267 to 1.442 eV at room temperature, while the compressive strain of the epitaxial layer reduces from 3.93 to 2.39% and from 4.62 to 3.17% on the growth plane and following the direction of growth, respectively.</p></div>Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2024-09-17T02:59:15Z