Titre :

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Auteur(s) :

Tang, Xiaohui [Auteur correspondant]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Krzeminski, Christophe [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Lecavelier Des Etangs-Levallois, Aurelien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Zhenkun [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kasper, Erich [Auteur]
Karmous, Alim [Auteur]
Reckinger, Nicolas [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Flandre, Denis [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Francis, Laurent A. [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Collinge, Jean-Pierre [Auteur]
Raskin, Jean-Pierre [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]

Titre de la revue :

Nano Letters

Pagination :

4520-4526

Éditeur :

American Chemical Society

Date de publication :

2011

ISSN :

1530-6984

Mot(s)-clé(s) en anglais :

Double floating-gate single-electron memory
heterostructure
quantum effects
conduction-band offset

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by ...
Lire la suite >We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Date de dépôt :

2024-09-19T02:28:01Z