Titre :

Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC

Auteur(s) :

M., Meneghini [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
M., Fregolent [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
N., Zagni [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Y., Hamadoui [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
A., Marcuzzi [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
D., Favero [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
C. De, Santi [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
M., Buffolo [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
M., Tomasi [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
G., Zappalà [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
E., Bahat-Treidel [Auteur]
E., Brusaterra [Auteur]
F., Brunner [Auteur]
CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) [CEA-DES (ex-DEN)]
O., Hilt [Auteur]
C., Huber [Auteur]
Bosch
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
G., Meneghesso [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
G., Verzellesi [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
P., Pavan [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Enrico, Zanoni [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]

Titre de la manifestation scientifique :

IEDM 2023 - 70th Annual IEEE International Electron Devices Meeting

Ville :

San Francisco

Pays :

Etats-Unis d'Amérique

Date de début de la manifestation scientifique :

2024-12-07

Titre de l’ouvrage :

Proceeding of IEDM 2024

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

We discuss recent advancements in the development of vertical GaN devices, and the relatedreliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and ...
Lire la suite >We discuss recent advancements in the development of vertical GaN devices, and the relatedreliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche capability (a property of Si and SiC devices) is demonstrated also for vertical devices on silicon substrate, enabling reliablehigh-voltage operation; (ii) threshold voltage instabilities are related to the presence of interface and border traps, whose contribution can be modeled with great accuracy by prior characterization of the trap distribution profile; (iii) gate stack reliability is mainly limited by oxide breakdown; factorslimiting off-state failure are discussed. Strategies for device improvement are proposed, also based on the learnings from silicon and silicon carbide technology.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet Européen :

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL