Title :

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Author(s) :

García-Sánchez, S [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, S [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Íñiguez-De-La-Torre, I [Auteur]
Departamento de Fisica Aplicada [Salamanca]
García-Vasallo, B [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Huo, L [Auteur]
Nanyang Technological University [Singapour] [NTU]
Lingaparthi, R [Auteur]
Nanyang Technological University [Singapour] [NTU]
Nethaji, D [Auteur]
Nanyang Technological University [Singapour] [NTU]
Radhakrishnan, K [Auteur]
Nanyang Technological University [Singapour] [NTU]
Council of Scientific and Industrial Research [India] [CSIR]
Abou Daher, M [Auteur]
Lesecq, Marie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
González, T [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Mateos, J [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Daher, M. Abou [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Journal of Physics D: Applied Physics

Pages :

015112

Publisher :

IOP Publishing

Publication date :

2024-10-14

ISSN :

0022-3727

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

Abstract Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm −1 ) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped ...
Show more >Abstract Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm −1 ) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of Gunn oscillations in fabricated devices has been observed yet. In order to avoid the avalanche, we propose the addition of a Schottky substrate terminal, which, by means of Monte Carlo simulations, has been confirmed to be able to suppress such not-desired leakage current when applying a negative substrate bias. When the substrate bias is positive, impact ionization is also reduced due to the lower electric field at the hotspot, but a vertical cathode-substrate current degrades the device operation. In order to avoid such current, we propose the use a MIS configuration for the substrate contact, which is the optimal solution.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2025-01-23T09:09:00Z