Title :

Experimental phase-advance in woven textile metasurface

Author(s) :

Burgnies, Ludovic [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Université du Littoral Côte d'Opale [ULCO]
Cochrane, Cédric [Auteur]
Génie des Matériaux Textiles - ULR 2461 [GEMTEX]
Rault, François [Auteur]
Génie des Matériaux Textiles - ULR 2461 [GEMTEX]
Sadaune, Veronique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lheurette, Eric [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Koncar, Vladan [Auteur]
Génie des Matériaux Textiles - ULR 2461 [GEMTEX]
Lippens, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Applied Physics Letters

Publisher :

American Institute of Physics

Publication date :

2015-11-16

ISSN :

0003-6951

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Transmission with phase advance is experimentally evidenced in a woven metasurface made of metallic wires and dielectric yarns. Similar to the negative refraction in metamaterials, phase advance is analyzed with a retrieval ...
Show more >Transmission with phase advance is experimentally evidenced in a woven metasurface made of metallic wires and dielectric yarns. Similar to the negative refraction in metamaterials, phase advance is analyzed with a retrieval procedure of effective medium parameters. It is shown that a quasi-unitary transmission level can be achieved below the magnetic plasma frequency with a phase advance in a propagation regime for which both effective permittivity and permeability exhibit negative values. By stacking two metasurfaces with metallic wires woven in orthogonal directions, the phase advance is maintained and a polarization insensitive woven metamaterial is achieved.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2025-03-20T05:52:42Z