Quenching of Spin Polarization Switching ...
Type de document :
Article dans une revue scientifique
DOI :
URL permanente :
Titre :
Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric “Ailing-Channel” in Organic Barrier
Auteur(s) :
Liang, Shiheng [Auteur]
Yu, Zhongwei [Auteur]
Devaux, Xavier [Auteur]
Ferri, Anthony [Auteur]
UCCS Équipe Couches Minces & Nanomatériaux
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Huang, Weichuan [Auteur]
Yang, Huaiwen [Auteur]
Desfeux, Rachel [Auteur]
UCCS Équipe Couches Minces & Nanomatériaux
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Li, Xiaoguang [Auteur]
Migot, Sylvie [Auteur]
Chaudhuri, Debapriya [Auteur]
Yang, Hongxin [Auteur]
Chshiev, Mairbek [Auteur]
Yang, Changping [Auteur]
Zhou, Bin [Auteur]
Fang, Jinghuai [Auteur]
Mangin, Stéphane [Auteur]
Lu, Yuan [Auteur]
Yu, Zhongwei [Auteur]
Devaux, Xavier [Auteur]
Ferri, Anthony [Auteur]
UCCS Équipe Couches Minces & Nanomatériaux
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Huang, Weichuan [Auteur]
Yang, Huaiwen [Auteur]
Desfeux, Rachel [Auteur]
UCCS Équipe Couches Minces & Nanomatériaux
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Li, Xiaoguang [Auteur]
Migot, Sylvie [Auteur]
Chaudhuri, Debapriya [Auteur]
Yang, Hongxin [Auteur]
Chshiev, Mairbek [Auteur]
Yang, Changping [Auteur]
Zhou, Bin [Auteur]
Fang, Jinghuai [Auteur]
Mangin, Stéphane [Auteur]
Lu, Yuan [Auteur]
Titre de la revue :
ACS Applied Materials & Interfaces
Nom court de la revue :
ACS Appl. Mater. Interfaces
Numéro :
10
Pagination :
30614-30622
Éditeur :
ACS
Date de publication :
2018-09-12
Mot(s)-clé(s) en anglais :
organic multiferroic tunnel junctions
spinterface
tunneling magneto-resistance
spin polarization
spinterface
tunneling magneto-resistance
spin polarization
Discipline(s) HAL :
Chimie/Chimie inorganique
Résumé en anglais : [en]
The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic ...
Lire la suite >The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric “ailing-channel” in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce “ailing-channels” that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric “ailing-channels” is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of “spinterface”.Lire moins >
Lire la suite >The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric “ailing-channel” in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce “ailing-channels” that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric “ailing-channels” is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of “spinterface”.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Établissement(s) :
ENSCL
CNRS
Centrale Lille
Univ. Artois
Université de Lille
CNRS
Centrale Lille
Univ. Artois
Université de Lille
Collections :
Équipe(s) de recherche :
Couches minces & nanomatériaux (CMNM)
Date de dépôt :
2019-09-25T15:06:53Z
2021-03-18T15:54:32Z
2021-03-18T15:54:32Z