Dislocation nucleation from surface step ...
Document type :
Article dans une revue scientifique
DOI :
Permalink :
Title :
Dislocation nucleation from surface step in silicon: The glide set versus the shuffle set
Author(s) :
Godet, Julien [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Journal title :
physica status solidi (a)
Abbreviated title :
Phys. Status Solidi (a)
Volume number :
206
Pages :
1885-1891
Publisher :
Wiley
Publication date :
2009-08
HAL domain(s) :
Chimie/Matériaux
English abstract : [en]
We have studied the mechanisms of dislocation nucleation from surface defects in silicon submitted to various stresses and temperatures. Molecular dynamics simulations with three classical potentials have shown the existence ...
Show more >We have studied the mechanisms of dislocation nucleation from surface defects in silicon submitted to various stresses and temperatures. Molecular dynamics simulations with three classical potentials have shown the existence of two different plastic modes in silicon which can be activated from surfaces. At high temperatures and low stresses dislocations nucleation occurs in the {111} glide set planes, while at low temperatures and large stresses it occurs in the {111} shuffle set planes. The analysis of dislocation cores and kinks shows structures like those well known in bulk silicon. This study supports the idea that plasticity in crystalline Si structures could be governed by dislocation nucleation from surfaces.Show less >
Show more >We have studied the mechanisms of dislocation nucleation from surface defects in silicon submitted to various stresses and temperatures. Molecular dynamics simulations with three classical potentials have shown the existence of two different plastic modes in silicon which can be activated from surfaces. At high temperatures and low stresses dislocations nucleation occurs in the {111} glide set planes, while at low temperatures and large stresses it occurs in the {111} shuffle set planes. The analysis of dislocation cores and kinks shows structures like those well known in bulk silicon. This study supports the idea that plasticity in crystalline Si structures could be governed by dislocation nucleation from surfaces.Show less >
Language :
Anglais
Audience :
Non spécifiée
Collections :
Submission date :
2020-02-21T10:32:43Z
2020-03-09T10:41:17Z
2020-03-09T10:44:12Z
2021-10-14T15:30:39Z
2020-03-09T10:41:17Z
2020-03-09T10:44:12Z
2021-10-14T15:30:39Z