Ge- and Al-related point defects generated ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Ge- and Al-related point defects generated by gamma irradiation in nanostructured erbium-doped optical fiber preforms
Auteur(s) :
León, M. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Lancry, M. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Ollier, N. [Auteur]
Laboratoire des Solides Irradiés - Irradiated Solids Laboratory [LSI]
Babu, B. H. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Bigot, L. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Hamzaoui, H. El [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Savelii, I. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Pastouret, A. [Auteur]
Burov, E. [Auteur]
Trompier, F. [Auteur]
Institut de Radioprotection et de Sûreté Nucléaire [IRSN]
Poumellec, B. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Bouazaoui, M. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Lancry, M. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Ollier, N. [Auteur]
Laboratoire des Solides Irradiés - Irradiated Solids Laboratory [LSI]
Babu, B. H. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Bigot, L. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Hamzaoui, H. El [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Savelii, I. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Pastouret, A. [Auteur]
Burov, E. [Auteur]
Trompier, F. [Auteur]
Institut de Radioprotection et de Sûreté Nucléaire [IRSN]
Poumellec, B. [Auteur]
Institut de Chimie Moléculaire et des Matériaux d'Orsay [ICMMO]
Bouazaoui, M. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Titre de la revue :
Journal of Materials Science
Pagination :
10245–10261
Éditeur :
Springer Verlag
Date de publication :
2016-08-04
ISSN :
0022-2461
Mot(s)-clé(s) en anglais :
Radiation-Induced Attenuation
Erbium-doped amplifiers
nanostructured fiber preforms
Erbium-doped amplifiers
nanostructured fiber preforms
Discipline(s) HAL :
Physique [physics]
Résumé en anglais : [en]
Erbium-doped amplifiers (EDFAs) are of special interest for space applications.In this environment, the ionizing radiations decrease the gain of these opticalamplifiers, due to the ionization of defects precursors, mainly ...
Lire la suite >Erbium-doped amplifiers (EDFAs) are of special interest for space applications.In this environment, the ionizing radiations decrease the gain of these opticalamplifiers, due to the ionization of defects precursors, mainly linked to dopantsas Germanium (Ge), Aluminum (Al), or Phosphorus (P). The aim of this work isto study the influence of the Ge and Al relative concentration on the radiationresistance of different nanostructured fiber preforms, manufactured by ModifiedChemical Vapor Deposition (MCVD), in which various types of nanoparticles(Er@SiO2-NP, Al2O3-NP, and Er@Al2O3-NP) have been introduced in thesilica matrix. The radiation resistance of these fibers has been compared withthat of standard MCVD Er-doped preforms. All of them have been characterizedby optical absorption and Electronic Paramagnetic Resonance (EPR) spectroscopiesbefore and after irradiation with a total gamma dose of 5.9 kGy. EPRresults show that Al-related defects are not observed in fiber preforms with Geconcentrations higher than 4.4 wt%. We also demonstrated that NP technologycan limit the formation of Aluminum-Oxygen Hole Centers (AlOHCs), reducingthe Radiation-Induced Attenuation at the energy of interest for EDFAs.Lire moins >
Lire la suite >Erbium-doped amplifiers (EDFAs) are of special interest for space applications.In this environment, the ionizing radiations decrease the gain of these opticalamplifiers, due to the ionization of defects precursors, mainly linked to dopantsas Germanium (Ge), Aluminum (Al), or Phosphorus (P). The aim of this work isto study the influence of the Ge and Al relative concentration on the radiationresistance of different nanostructured fiber preforms, manufactured by ModifiedChemical Vapor Deposition (MCVD), in which various types of nanoparticles(Er@SiO2-NP, Al2O3-NP, and Er@Al2O3-NP) have been introduced in thesilica matrix. The radiation resistance of these fibers has been compared withthat of standard MCVD Er-doped preforms. All of them have been characterizedby optical absorption and Electronic Paramagnetic Resonance (EPR) spectroscopiesbefore and after irradiation with a total gamma dose of 5.9 kGy. EPRresults show that Al-related defects are not observed in fiber preforms with Geconcentrations higher than 4.4 wt%. We also demonstrated that NP technologycan limit the formation of Aluminum-Oxygen Hole Centers (AlOHCs), reducingthe Radiation-Induced Attenuation at the energy of interest for EDFAs.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :