Title :

Electronic excitation to low-lying states of GeF₄ molecule by electron impact: A comparative study with CF₄ and SiF₄ molecules

Author(s) :

Ohtomi, S. [Auteur]
Matsui, M [Auteur]
Mochizuki, Y. [Auteur]
Suga, A [Auteur]
Hoshino, M [Auteur]
Duflot, Denis [Auteur]
Physico-Chimie Moléculaire Théorique [PCMT]
Limão-Vieira, Paulo [Auteur]
Centro de Física e Investigação Tecnológica [Lisboa] [CEFITEC]
Tanaka, H [Auteur]

Journal title :

Journal of Physics: Conference Series

Pages :

072041

Publisher :

IOP Science

Publication date :

2015-04-01

ISSN :

1742-6588

HAL domain(s) :

Physique [physics]/Physique [physics]/Chimie-Physique [physics.chem-ph]

English abstract : [en]

We report on the measurements of the electron impact electronic excitation cross sections for XF₄ (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 ...
Show more >We report on the measurements of the electron impact electronic excitation cross sections for XF₄ (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF₄ molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM) - UMR 8523

Source :

Harvested from HAL