Titre :

Study of structural and optical properties of InSb-doped SiO₂ thin films

Auteur(s) :

Capoen, Bruno [Auteur correspondant]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Lam, V.Q. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Centre d'Etudes et de Recherches Lasers et Applications [CERLA]
Turrell, S. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Centre d'Etudes et de Recherches Lasers et Applications [CERLA]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Beclin, F. [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Jestin, Y. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Bouazaoui, M. [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]

Titre de la revue :

Journal of Non-Crystalline Solids

Pagination :

1819-1824

Éditeur :

Elsevier

Date de publication :

2005

ISSN :

0022-3093

Résumé en anglais : [en]

The non-linear absorption and the structure of rf-cosputtered SiO2:InSb films were investigated after different heat-treatments at temperatures ranging from 200 to 900 °C. The heat-treatment was 1 min or 4 h in an atmosphere ...
Lire la suite >The non-linear absorption and the structure of rf-cosputtered SiO2:InSb films were investigated after different heat-treatments at temperatures ranging from 200 to 900 °C. The heat-treatment was 1 min or 4 h in an atmosphere of nitrogen or under vacuum, respectively. After annealing at a temperature higher than 200 °C, the presence of nanocrystallites in the layers was detected by transmission electron microscopy (TEM) and Raman spectroscopy. The growth of either Sb or InSb nanocrystals essentially depends on both the annealing temperature and the heat-treatment time. Particularly, it was shown that a rapid thermal annealing (RTA) is necessary to obtain crystals of InSb with size estimated to be about 15 nm. The largest positive non-linear coefficient β, as measured by the Z-scan method at 1064 nm in a nanosecond regime, was found to be equal to 1.8 × 10−3 cm/W when the films contain InSb particles of larger size (up to 100 nm). However, when increasing the incident irradiance on the sample, the non-linear effect does not increase and seems to saturate, which can explain the discrepancies observed with previous works on similar materials. This disagreement may also be due to different response times of the non-linearities related to thermal effects in the continuous wave (CW) open-aperture Z-scan configuration.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM) - UMR 8523

Source :

Harvested from HAL