Title :

A GaN Schottky diode-based analog phase shifter MMIC

Author(s) :

Jin, Chong [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faucher, Marc [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
DUCATTEAU, Damien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pavlidis, Dimitris [Auteur]

Conference title :

9th European Microwave Integrated Circuit Conference (EuMIC)

City :

Rome

Country :

Italie

Start date of the conference :

2014-10-06

Book title :

9th European Microwave Integrated Circuit Conference (EuMIC)

Publisher :

IEEE

Publication date :

2014

English keyword(s) :

Phase shifter
Gallium nitride
Schottky diode

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal ...
Show more >A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45 degrees with similar to 7 dB insertion loss and a maximum VSWR of 2: 1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL