Title :

AlGaN/GaN HEMTs on AlN substrate for power electronics

Author(s) :

Mehta, Jash Rinku [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ngo, Thi Huong [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021

City :

Bristol (virtual)

Country :

Royaume-Uni

Start date of the conference :

2021-06-14

Publication date :

2021-06-14

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 ...
Show more >GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Réseau national sur GaN
Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL