AlGaN channel high electron mobility transistors with regrown ohmic contacts

Abid, Idriss; Mehta, Jash Rinku; Cordier, Yvon; Derluyn, Joff; Degroote, Stefan; Miyake, Hideto; Medjdoub, Farid

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.3390/electronics10060635

Title :

AlGaN channel high electron mobility transistors with regrown ohmic contacts

Author(s) :

Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mehta, Jash Rinku [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Derluyn, Joff [Auteur]
SOITEC
Degroote, Stefan [Auteur]
SOITEC
Miyake, Hideto [Auteur]
Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Electronics

Pages :

635

Publisher :

MDPI

Publication date :

2021-03-10

ISSN :

2079-9292

English keyword(s) :

Ultra-wide BandGap
HEMTs transistors

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

High power electronics using wide bandgap materials are maturing rapidly, and significantmarket growth is expected in a near future. Ultra wide bandgap materials, which have an even largerbandgap than GaN (3.4 eV), represent ...
Show more >High power electronics using wide bandgap materials are maturing rapidly, and significantmarket growth is expected in a near future. Ultra wide bandgap materials, which have an even largerbandgap than GaN (3.4 eV), represent an attractive choice of materials to further push the performancelimits of power devices. In this work, we report on the fabrication of AlN/AlGaN/AlN high-electronmobility transistors (HEMTs) using 50% Al-content on the AlGaN channel, which has a much widerbandgap than the commonly used GaN channel. The structure was grown by metalorganic chemicalvapor deposition (MOCVD) on AlN/sapphire templates. A buffer breakdown field as high as5.5 MV/cm was reported for short contact distances. Furthermore, transistors have been successfullyfabricated on this heterostructure, with low leakage current and low on-resistance. A remarkablethree-terminal breakdown voltage above 4 kV with an off-state leakage current below 1μA/mm wasachieved. A regrown ohmic contact was used to reduce the source/drain ohmic contact resistance,yielding a drain current density of about 0.1Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance
Réseau national sur GaN

Collections :