The electrostatically forced Faraday instability: theory and experiments

Ward, Kevin; Matsumoto, Satoshi; Narayanan, Ranga

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1017/jfm.2018.940

Title :

The electrostatically forced Faraday instability: theory and experiments

Author(s) :

Ward, Kevin [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Department of Chemical Engineering [Gainesville] [UF|CHE]
Matsumoto, Satoshi [Auteur]
Narayanan, Ranga [Auteur]
Department of Chemical Engineering [Gainesville] [UF|CHE]

Journal title :

Journal of Fluid Mechanics

Pages :

696-731

Publisher :

Cambridge University Press (CUP)

Publication date :

2019

ISSN :

0022-1120

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The onset of interfacial instability in two-fluid systems using a viscous, leaky dielectric model is studied. The instability arises as a result of resonance between the parametric frequency of an imposed electric field ...
Show more >The onset of interfacial instability in two-fluid systems using a viscous, leaky dielectric model is studied. The instability arises as a result of resonance between the parametric frequency of an imposed electric field and the system's natural frequency. In addition to a rigorous model that uses Floquet instability analysis, where both viscous and charge effects are considered, this study also provides convincing validating experiments. In other results, it is shown that (a) the imposition of a periodic electrostatic potential acts to counter gravity and this countering effect becomes more effective if a DC voltage is also added, (b) a critical DC voltage exists at which the interface becomes unstable such that no parametric frequency is required to completely destabilize the interface and (c) the leaky dielectric model approaches a model for a perfect dielectric/perfect conductor pair as the conductivity ratio becomes large. It is also shown via experiments that parametric resonant instability using electrostatic forcing may be reliably used to estimate interfacial tension to sufficient accuracy.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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