Ferroelectric Gating of Narrow Band-Gap ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling
Author(s) :
Gréboval, Charlie [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Chu, Audrey [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Magalhaes, Debora [Auteur]
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
Ramade, Julien [Auteur]
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
Qu, Junling [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Rastogi, Prachi [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Khalili, Adrien [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Chee, Sang-Soo [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Aubin, Hervé [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Vincent, Grégory [Auteur]
DOTA, ONERA, Université Paris Saclay [Palaiseau]
Bals, Sara [Auteur]
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Lhuillier, Emmanuel [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Institut des Nanosciences de Paris [INSP]
Physico-chimie et dynamique des surfaces [INSP-E6]
Chu, Audrey [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Magalhaes, Debora [Auteur]
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
Ramade, Julien [Auteur]
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
Qu, Junling [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Rastogi, Prachi [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Khalili, Adrien [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Chee, Sang-Soo [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Aubin, Hervé [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Vincent, Grégory [Auteur]
DOTA, ONERA, Université Paris Saclay [Palaiseau]
Bals, Sara [Auteur]
Universiteit Antwerpen = University of Antwerpen [Antwerpen]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Physique - IEMN [PHYSIQUE - IEMN]
Lhuillier, Emmanuel [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]
Institut des Nanosciences de Paris [INSP]
Journal title :
ACS Photonics
Pages :
259–268
Publisher :
American Chemical Society
Publication date :
2021-01-20
ISSN :
2330-4022
English keyword(s) :
narrow band-gap nanocrystals
ferroelectric
field-effect transistor
infrared
plasmonic resonator
ferroelectric
field-effect transistor
infrared
plasmonic resonator
HAL domain(s) :
Chimie/Matériaux
Physique [physics]/Matière Condensée [cond-mat]
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room ...
Show more >As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room temperature operation have been demonstrated, longer wavelengths still require low temperature operation requiring specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low temperature detection. To reach this goal two key developments are proposed. First, we report gating of nanocrystal films from SrTiO3 used as a ferroelectric material leading to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Secondly, we demonstrate that this FET is compatible with a plasmonic resonator which role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broad band absorption from 1.5 to 3 µm reaching 30% is demonstrated. Finally combining gate and enhanced light matter coupling, we show that detectivity can be as high as 10 12 jones for a device presenting a 3 µm cutoff wavelength and 30 K operation.Show less >
Show more >As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room temperature operation have been demonstrated, longer wavelengths still require low temperature operation requiring specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low temperature detection. To reach this goal two key developments are proposed. First, we report gating of nanocrystal films from SrTiO3 used as a ferroelectric material leading to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Secondly, we demonstrate that this FET is compatible with a plasmonic resonator which role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broad band absorption from 1.5 to 3 µm reaching 30% is demonstrated. Finally combining gate and enhanced light matter coupling, we show that detectivity can be as high as 10 12 jones for a device presenting a 3 µm cutoff wavelength and 30 K operation.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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