High Power AlN/GaN HEMTs with record ...
Document type :
Communication dans un congrès avec actes
Title :
High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
Author(s) :
Harrouche, Kathia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Conference title :
IEEE/MTT-S International Microwave Symposium (IMS 2020)
City :
Los Angeles, CA
Country :
Etats-Unis d'Amérique
Start date of the conference :
2020-08-04
Journal title :
2020 IEEE/MTT-S International Microwave Symposium (IMS)
Publisher :
IEEE
English keyword(s) :
GaN
HEMTs
AlN/GaN
output power density (Pout)
Q-band
power added efficiency (PAE)
HEMTs
AlN/GaN
output power density (Pout)
Q-band
power added efficiency (PAE)
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and ...
Show more >We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and robustness for the thinner barrier layer attributed to the reduced mechanical strain into the heterostructure. Large signal characteristics at 40 GHz revealed an outstanding PAE of 73% at VDS = 30V associated to an output power density > 5 W/mm in pulsed mode. Also, the load-pull measurements mapping across the 4-inch wafer demonstrates a high uniformity and reproducibility of the results. Consequently, significantly improved PAE can be expected for next generation of high power MMICs operating in the millimeter-wave range.Show less >
Show more >We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and robustness for the thinner barrier layer attributed to the reduced mechanical strain into the heterostructure. Large signal characteristics at 40 GHz revealed an outstanding PAE of 73% at VDS = 30V associated to an output power density > 5 W/mm in pulsed mode. Also, the load-pull measurements mapping across the 4-inch wafer demonstrates a high uniformity and reproducibility of the results. Consequently, significantly improved PAE can be expected for next generation of high power MMICs operating in the millimeter-wave range.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
Files
- https://hal.archives-ouvertes.fr/hal-03043653/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-03043653/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-03043653/document
- Open access
- Access the document
- document
- Open access
- Access the document
- Abstract-IMS2020-final.pdf
- Open access
- Access the document
- Abstract-IMS2020-final.pdf
- Open access
- Access the document