High Efficiency AlN/GaN HEMTs for Q-Band ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
Author(s) :
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pecheux, Romain [Auteur]
Harrouche, Kathia [Auteur]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Derluyn, Joff [Auteur]
Degroote, Stefan [Auteur]
Germain, Marianne [Auteur]
Gucmann, Filip [Auteur]
Middleton, Callum [Auteur]
Pomeroy, James [Auteur]
Kuball, Martin [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pecheux, Romain [Auteur]
Harrouche, Kathia [Auteur]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
![refId](/themes/Mirage2//images/idref.png)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Derluyn, Joff [Auteur]
Degroote, Stefan [Auteur]
Germain, Marianne [Auteur]
Gucmann, Filip [Auteur]
Middleton, Callum [Auteur]
Pomeroy, James [Auteur]
Kuball, Martin [Auteur]
Journal title :
International Journal of High Speed Electronics and Systems
Pages :
1940003
Publisher :
World Scientific Publishing
Publication date :
2019-03
ISSN :
0129-1564
English keyword(s) :
High electron mobility transistors (HEMTs)
Double heterostructure field effect transistor (DHFET)
GaN
Raman thermography
output power density (POUT)
power added efficiency (PAE)
Double heterostructure field effect transistor (DHFET)
GaN
Raman thermography
output power density (POUT)
power added efficiency (PAE)
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 ...
Show more >In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.Show less >
Show more >In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.Show less >
Language :
Anglais
Popular science :
Non
Source :
Files
- https://hal.archives-ouvertes.fr/hal-02356733/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-02356733/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-02356733/document
- Open access
- Access the document
- document
- Open access
- Access the document
- ijhses%20final.pdf
- Open access
- Access the document
- ijhses%20final.pdf
- Open access
- Access the document