Free-carrier mobility in GaN in the presence of dislocation walls

Farvacque, J.-L.; Bougrioua, Zahia; Moerman, I.

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1103/PhysRevB.63.115202

Title :

Free-carrier mobility in GaN in the presence of dislocation walls

Author(s) :

Farvacque, J.-L. [Auteur]
Université de Lille, Sciences et Technologies
Bougrioua, Zahia [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, I. [Auteur]

Journal title :

Physical Review B

Publisher :

American Physical Society

Publication date :

2001-02

ISSN :

2469-9950

HAL domain(s) :

Physique [physics]

English abstract : [en]

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp ...
Show more >The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation appears as soon as the carrier density exceeds a critical value that depends on the growth process. Using low-field electrical transport simulations, we show that this particular mobility behavior cannot be simply interpreted in terms of dislocation scattering or trapping mechanisms, but that it is also controlled by the collective effect of dislocation walls (the columnar structure). As the free-carrier density increases, the more efficient screening properties result in the transition from a barrier-controlled mobility regime to a pure-diffusion-process-controlled mobility regime. The model permits us to reproduce the experimental mobility collapse quantitatively.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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