Titre :

Determination of the d31 piezoelectric coefficient of PbZrxTi1−xO3 thin films using multilayer buckled micromembranes

Auteur(s) :

Ayela, C. [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]
Nicu, Liviu [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]
Soyer, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cattan, Eric [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bergaud, C. [Auteur]
Laboratory for Integrated Micro Mechatronics Systems [LIMMS]

Titre de la revue :

Journal of Applied Physics

Pagination :

054908

Éditeur :

American Institute of Physics

Date de publication :

2006-09-12

ISSN :

0021-8979

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d31 of PbZrxTi1-xO3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial ...
Lire la suite >The aim of this paper consists in the determination of the piezoelectric transverse coefficient d31 of PbZrxTi1-xO3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built and used for the calculation of d31 starting with the static profiles of the microfabricated devices determined by means of a double-beam interferometer. The influence of dc voltage and buckling effects on the d31 piezoelectric coefficient at the microscale were investigated, and high values were obtained, from 30to75pm/V, within a hysteresyslike cycle. These results demonstrated the good electrical behavior of PZT thin films at the microscale with a low influence of buckling effects and determined optimal operation conditions for high values of d31.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL