Titre :

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

Auteur(s) :

Bougrioua, Zahia [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Farvacque, J. [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Université de Lille, Sciences et Technologies
Ferre, D. [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]

Titre de la revue :

Journal of Applied Physics

Pagination :

1536-1545

Éditeur :

American Institute of Physics

Date de publication :

1996-02

ISSN :

0021-8979

Discipline(s) HAL :

Physique [physics]
Physique [physics]/Matière Condensée [cond-mat]

Résumé en anglais : [en]

This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through ...
Lire la suite >This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through the potential associated with their linear electric charge and not with their strain field potentials. Two different experimental cases, both supported by GaAlAs‐GaInAs‐GaAs samples, have been considered: (i) samples containing long misfit dislocations issuing from a partial relaxation, during the crystal epitaxial growth and (ii) samples containing dislocation segments introduced by plastic deformation. It is shown that in the case of long misfit dislocations, the free carrier mobility parallel to the dislocations remains unaffected by dislocations while it is probably controlled by some tunneling effect in the direction perpendicular to the lines. In the case of dislocation segments, the free carrier mobility is controlled in both directions by a diffusion process which may be described with the help of a phenomenological potential.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL