Titre :

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Auteur(s) :

Duffy, Steven [Auteur]
Liverpool John Moores University [LJMU]
Benbakhti, Brahim [Auteur correspondant]
Liverpool John Moores University [LJMU]
Kalna, Karol [Auteur]
Swansea University
Boucherta, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zhang, Wei [Auteur]
China Aerospace Science and Industry Corporation [CASIC]
Bourzgui, Nour-Eddine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Puissance - IEMN [PUISSANCE - IEMN]

Titre de la revue :

IEEE ACCESS

Pagination :

42721-42728

Éditeur :

IEEE

Date de publication :

2018

ISSN :

2169-3536

Mot(s)-clé(s) en anglais :

AlGaN/GaN based devices
ohmic contact
self-heating
infrared camera
high-resolution X-ray diffraction

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

ABSTRACT Operating temperature distributions in AlGaN/GaN gateless and gated devices arecharacterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantialrise of channel temperature ...
Lire la suite >ABSTRACT Operating temperature distributions in AlGaN/GaN gateless and gated devices arecharacterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantialrise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiationbased high-resolution X-ray diffraction technique combined with drift–diffusion simulations show that strainreduction at the vicinity of ohmic contacts increases electric field at these locations, resulting in the riseof lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a lowconductive channel region is an origin of the temperature rise observed in both short- and long-channelgateless devices.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL