Magnetic-Phase Dependence of the Spin ...
Type de document :
Article dans une revue scientifique: Article original
Titre :
Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons
Auteur(s) :
Li, Jing [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Niquet, Yann-Michel [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratory of Atomistic Simulation [LSIM ]
Niquet, Yann-Michel [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Delerue, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Physical Review Letters
Pagination :
236602
Éditeur :
American Physical Society
Date de publication :
2016
ISSN :
0031-9007
Mot(s)-clé(s) en anglais :
Epitaxial Graphene
Magnetoresistance
Magnetoresistance
Discipline(s) HAL :
Physique [physics]
Résumé en anglais : [en]
We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches ...
Lire la suite >We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the current becomes spin polarized and the mean free path rises from 10 nm to micrometers. In the ferromagnetic state, the current flows through one majority-spin channel which is ballistic over micrometers and several minority-spin channels with mean free paths as low as 1 nm. These features predicted in technology-relevant conditions could be nicely exploited in spintronic devices.Lire moins >
Lire la suite >We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the current becomes spin polarized and the mean free path rises from 10 nm to micrometers. In the ferromagnetic state, the current flows through one majority-spin channel which is ballistic over micrometers and several minority-spin channels with mean free paths as low as 1 nm. These features predicted in technology-relevant conditions could be nicely exploited in spintronic devices.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :