Self-Equilibration of the Diameter of ...
Document type :
Article dans une revue scientifique: Article original
Title :
Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires
Author(s) :
Dubrovskii, V. [Auteur]
Xu, T. [Auteur]
Álvarez, A. Díaz [Auteur]
Plissard, S.R. [Auteur]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Caroff, P. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Glas, F. [Auteur]
Centre de Nanosciences et de Nanotechnologies [Marcoussis] [C2N]
Grandidier, Bruno [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Xu, T. [Auteur]
Álvarez, A. Díaz [Auteur]
Plissard, S.R. [Auteur]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Caroff, P. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Glas, F. [Auteur]
Centre de Nanosciences et de Nanotechnologies [Marcoussis] [C2N]
Grandidier, Bruno [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Nano Letters
Pages :
5580 - 5584
Publisher :
American Chemical Society
Publication date :
2015-08
ISSN :
1530-6984
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Physique Quantique [quant-ph]
Chimie/Cristallographie
Chimie/Matériaux
Physique [physics]/Physique Quantique [quant-ph]
Chimie/Cristallographie
Chimie/Matériaux
English abstract : [en]
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help ...
Show more >Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III–V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.Show less >
Show more >Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III–V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :