Twin-Induced InSb Nanosails: A Convenient ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System
Author(s) :
de La Mata, María [Auteur]
Leturcq, Renaud [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Plissard, S.R. [Auteur]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Rolland, Chloé [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Magen, Cesar [Auteur]
Arbiol, Jordi [Auteur]
Institució Catalana de Recerca i Estudis Avançats = Catalan Institution for Research and Advanced Studies [ICREA]
Caroff, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Leturcq, Renaud [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Plissard, S.R. [Auteur]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Rolland, Chloé [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Magen, Cesar [Auteur]
Arbiol, Jordi [Auteur]
Institució Catalana de Recerca i Estudis Avançats = Catalan Institution for Research and Advanced Studies [ICREA]
Caroff, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Journal title :
Nano Letters
Pages :
825 - 833
Publisher :
American Chemical Society
Publication date :
2016-02
ISSN :
1530-6984
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Physique Quantique [quant-ph]
Chimie/Cristallographie
Chimie/Matériaux
Physique [physics]/Physique Quantique [quant-ph]
Chimie/Cristallographie
Chimie/Matériaux
English abstract : [en]
Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ ...
Show more >Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm2·V–1·s–1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb “nanosails” as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.Show less >
Show more >Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm2·V–1·s–1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb “nanosails” as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.Show less >
Language :
Anglais
Popular science :
Non
Source :