Raman characterization of Ar+ ion-implanted GaN

Boudart, B.; Guhel, Y.; Pesant, J. C.; Dhamelincourt, P.; Poisson, M. A.

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1002/jrs.856

Title :

Raman characterization of Ar+ ion-implanted GaN

Author(s) :

Boudart, B. [Auteur]
Laboratoire Universitaire des Sciences Appliquées de Cherbourg [LUSAC]
Guhel, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pesant, J. C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dhamelincourt, P. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Poisson, M. A. [Auteur]
Alcatel-Thalès III-V lab [III-V Lab]

Journal title :

Journal of Raman Spectroscopy

Pages :

283 - 286

Publisher :

Wiley

Publication date :

2002-04

ISSN :

0377-0486

HAL domain(s) :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Matériaux

English abstract : [en]

Ar+ ions were implanted at room temperature in n-type hexagonal GaN for device isolation purpose. We performed electrical measurements and resonance Raman spectroscopy in order to monitor the electrical and structural ...
Show more >Ar+ ions were implanted at room temperature in n-type hexagonal GaN for device isolation purpose. We performed electrical measurements and resonance Raman spectroscopy in order to monitor the electrical and structural changes of non-annealed and annealed implanted GaN samples. On increasing the implantation dose from 3.4 × 1012 to 3.4 × 1014 ions cm−2, an increase in the electrical isolation and a decrease in the photoluminescence were observed. For a 1016 ions cm−2 dose, the implanted layer became conductive owing to a hopping mechanism and only the first-order phonon lines remained observable. After annealing at 900 °C for 30 s, the implanted samples became conductive and the photoluminescence reappeared or increased compared with the non-annealed samples at same implantation doses, except for the sample implanted at the highest dose, which became insulating.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Files

https://api.istex.fr/document/C1E7482612B2CC5C3E5E9EA9BD446B22F6AC778B/fulltext/pdf?sid=hal
Open access
Access the document

https://api.istex.fr/document/C1E7482612B2CC5C3E5E9EA9BD446B22F6AC778B/fulltext/pdf?sid=hal
Open access
Access the document

https://api.istex.fr/document/C1E7482612B2CC5C3E5E9EA9BD446B22F6AC778B/fulltext/pdf?sid=hal
Open access
Access the document

https://api.istex.fr/document/C1E7482612B2CC5C3E5E9EA9BD446B22F6AC778B/fulltext/pdf?sid=hal
Open access
Access the document

https://api.istex.fr/document/C1E7482612B2CC5C3E5E9EA9BD446B22F6AC778B/fulltext/pdf?sid=hal
Open access
Access the document

https://api.istex.fr/document/C1E7482612B2CC5C3E5E9EA9BD446B22F6AC778B/fulltext/pdf?sid=hal
Open access
Access the document

pdf
Open access
Access the document

Raman characterization of Ar+ ion-implanted GaN BibTeX CSV Excel RIS

Files

Raman characterization of Ar+ ion-implanted GaN

BibTeX

CSV

Excel

RIS