Title :

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Author(s) :

Rzin, Mehdi [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Routoure, Jean-Marc [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Guillet, Bruno [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Méchin, Laurence [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Morales, Magali [Auteur]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Lacam, Cédric [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Gamarra, Piero [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Ruterana, Pierre [Auteur]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Transactions on Electron Devices

Pages :

2820-2825

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2017

ISSN :

0018-9383

English keyword(s) :

Channel resistance
gate–drain spacing
in situ sin passivation
InAlGaN/GaN
low-frequency noise (LFN)
metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT).

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in ...
Show more >In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–drain spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for L GD < 10 μm. Finally, the calculated Hooge parameter (α H) is equal to 3.1 × 10 −4. It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

Couches d'InAlN et hétérostructures optimisées pour la future génération de transistors hyperfréquences de puissance

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL