Title :

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Author(s) :

Cuniot-Ponsard, Mireille [Auteur]
Laboratoire Charles Fabry / Manolia
Saraswati, Irma [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Universitas Indonesia [UI ]
Ko, S.-M. [Auteur]
Halbwax, Mathieu [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Cho, Y.-H. [Auteur]
Poespawati, N.-R. [Auteur]
Universitas Indonesia [UI ]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]

Conference title :

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond

City :

Lille

Country :

France

Start date of the conference :

2014-05-26

Publication date :

2014

HAL domain(s) :

Physique [physics]/Physique [physics]/Optique [physics.optics]

English abstract : [en]

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer ...
Show more >In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN are analyzed using TEM and the influence of threading dislocations density is discussed. Optical properties are investigated using a prism coupling [2]. Electrooptic measurements are performed using an original technique [3]. A semi-transparent gold electrode is deposited on top of GaN layer and an alternating voltage is applied between top and bottom electrodes. The electro-optic, converse piezoelectric, and electro-absorptive coefficients are simultaneously determined from the measurement of the electric field induced variation ΔR(θ) in the reflectivity of the Au/GaN/buffer/Si stack versus incident angle. The method also enables to determine the GaN layer polarity. The results obtained for a Ga-face [0001] GaN layer when using a modulation frequency of 230 Hz are for the electro-optic coefficients r13 = +1 pm/V, r33 = +1.60 pm/V at 633 nm, and for the transverse piezoelectric coefficient d33 = +4.59 pm/V. The value measured for the electro-absorptive variation is Δko/ΔE = +0.77 pm/V. The electro-optic coefficients for GaN /Si and the electro-absorptive coefficient are measured for the first time. The converse piezoelectric value agrees with values previously reported.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL