Title :

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Author(s) :

Sundaram, Suresh [Auteur]
Georgia Tech Lorraine [Metz]
Puybaret, Renaud [Auteur]
Georgia Tech Lorraine [Metz]
Li, Xin [Auteur]
Georgia Tech Lorraine [Metz]
El Gmili, Youssef [Auteur]
Georgia Tech Lorraine [Metz]
Pantzas, Konstantinos [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Orsal, G. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Troadec, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Patriarche, Gilles [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Voss, Paul L [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]

Journal title :

Journal of Applied Physics

Pages :

163105-163105-6

Publisher :

American Institute of Physics

Publication date :

2014-10

ISSN :

0021-8979

HAL domain(s) :

Physique [physics]/Physique [physics]/Optique [physics.optics]
Sciences de l'ingénieur [physics]/Matériaux

English abstract : [en]

Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and ...
Show more >Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150 nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535 nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL