Title :

Optical properties of nanoporous gallium nitride for photonic applications

Author(s) :

Alshehri, Bandar [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014

City :

Villeneuve d'Ascq

Country :

France

Start date of the conference :

2014

Book title :

Actes des 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014

Publication date :

2014

English abstract : [en]

The aim of this research is to characterize the optical properties of a gallium nitride thin film grown on sapphire by MOCVD. Nanoporous of gallium nitride are formed by electrochemical etching. Refractive index, thickness ...
Show more >The aim of this research is to characterize the optical properties of a gallium nitride thin film grown on sapphire by MOCVD. Nanoporous of gallium nitride are formed by electrochemical etching. Refractive index, thickness and birefringence are extracted from the nanoporous thin film. Prism coupling and spectroscopic ellipsometry were used to evaluate the refractive index and extinction coefficient of nanoporous GaN and the results were compared with the properties of bulk GaN. Optical properties of GaN can be tuned by controlling the pores density (pore size and interdistance). The refractive index of nanoporous GaN decreased by increasing the pore density. The measured optical properties of nanoporous GaN is significant for designing optical devices based on an index-controlled nanoporous layer. Nanoporous GaN samples have been characterized by SEM and TEM analysis to optimize the porosity of each rate. Relation between the optical properties and the resultant microstructure are investigated by the extraction of effective indices for TE and TM modes by using two different techniques, the prism coupling and the ellipsometry at different wavelengths. The index dispersion for the nanostructured GaN is compared to the GaN homogenous layers. Refractive index extracted by prism coupling at 633nm has been done with index n0 equal to 2.347 for bulk GaN while it is 2.336 for a pores density of 20% GaN.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL