Title :

Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film

Author(s) :

Jegou, C. [Auteur]
Institut d'électronique fondamentale [IEF]
Michalas, L. [Auteur]
Maroutian, T. [Auteur]
Institut d'électronique fondamentale [IEF]
Agnus, G. [Auteur]
Institut d'électronique fondamentale [IEF]
Koutsoureli, M. [Auteur]
Papaioannou, G. [Auteur]
Largeau, L. [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Troadec, david [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Leuliet, A. [Auteur]
Thales Research and Technology [Palaiseau]
Aubert, P. [Auteur]
Institut d'électronique fondamentale [IEF]
Lecoeur, P. [Auteur]
Institut d'électronique fondamentale [IEF]

Journal title :

Thin Solid Films

Pages :

32-35

Publisher :

Elsevier

Publication date :

2014

ISSN :

0040-6090

English keyword(s) :

PZT thin films
electrical characterizations
conduction mechanisms
pulsed laser deposition

English abstract : [en]

The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with a La0.67Sr0.33MnO3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230-330 K temperature ...
Show more >The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with a La0.67Sr0.33MnO3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230-330 K temperature range. X-Ray diffraction and transmission electron microscopy evidenced a columnar growth of (001)- and (011)-oriented PZT grains. The leakage current through the Pt/PZT/LSMO/Pt structure was then systematically measured. From current vs. time curves, a threshold voltage was found below which stable and reproducible current values are obtained, thus avoiding resistance degradation. The conduction mechanism changes from interface controlled at low temperatures to bulk controlled around room temperature. The hopping-type conductivity evidenced above 270 K is consistent with the extended defects and columnar microstructure of the PZT film.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL