Titre :

Improved wet chemical transfer process to obtain clean high quality graphene

Auteur(s) :

Deokar, Geetanjali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Codron, Jean-Louis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pichonat, Emmanuelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments

Ville :

Lille

Pays :

France

Date de début de la manifestation scientifique :

2014

Résumé en anglais : [en]

Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization ...
Lire la suite >Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization requires a clean and reproducible graphene transfer on non-conducting substrates, which is still a challenge. The conventional wet chemical transfer process [3] involves polymethyl methacrylate (PMMA) spin coated on monolayer graphene on Cu foil, followed by Cu wet etching, wet transfer, drying and PMMA removal. Here we present an improved conventional wet chemical transfer process to obtain a high quality graphene, with significantly reduced defect density and polymer residues and free of metallic contaminants. The various modified steps in the conventional wet chemical transfer process and their significance will be discussed. Graphene was grown by CVD on Cu foils at 1050°C, under 10 torr Ar:H2:CH4 atmosphere. The as-grown and transferred graphene samples were characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Further, the transport properties were studied by Hall effect measurements. The large area, high quality and residue free monolayer graphene on insulator will serve for next generation graphene based applications. [1] Li X. et.al., Science 324, 2009,1312-1314. [2] Reina A., et. al., Nano Res. 2, 2010, 509-516. [3] Li X., et.al., Nano Lett. 9, 2009, 4359-4363.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL