Title :

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Author(s) :

Benzeghda, Sabah [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benzeghda, A. [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]

Conference title :

International Conference on Renewable Energies and Power Quality, ICREPQ'14

City :

Córdoba

Country :

Espagne

Start date of the conference :

2014

Book title :

Proceedings of 2014 International Conference on Renewable Energies and Power Quality, ICREPQ'14

Publication date :

2014

English keyword(s) :

impulse response
MSM photodetector
space charge

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal ...
Show more >Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photodetector MSM is introduced in the microwave lines have active surfaces of 3x3 μm2 and electrode spacing of 0.2, 0.3, 0.5 and 1 μm. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswich.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL