Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Millithaler, J.F.; Iniguez-De-La-Torre, I.; Iniguez-De-La-Torre, A.; Gonz Alez, T.; Sangaré, P.; Ducournau, Guillaume; Gaquiere, Christophe; Mateos, J.

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1063/1.4866166

Title :

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Author(s) :

Millithaler, J.F. [Auteur]
Iniguez-De-La-Torre, I. [Auteur]
Iniguez-De-La-Torre, A. [Auteur]
Gonz Alez, T. [Auteur]
Sangaré, P. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mateos, J. [Auteur]

Journal title :

Applied Physics Letters

Pages :

073509, 4 pages

Publisher :

American Institute of Physics

Publication date :

2014

ISSN :

0003-6951

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where ...
Show more >In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode. This design, which reduces the effect of the surface-charges at the anode side, is the most favourable one for the onset of Gunn oscillations, which emerge at lower current levels and with lower threshold voltages as compared to the standard square geometry, thus enhancing the power efficiency of the self-switching diode as sub-millimeter wave emitters.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Files

https://gredos.usal.es/bitstream/10366/130335/3/APL-2014a.pdf
Open access
Access the document

https://hal.archives-ouvertes.fr/hal-00951554/document
Open access
Access the document

https://hal.archives-ouvertes.fr/hal-00951554/document
Open access
Access the document

document
Open access
Access the document

Millithaler_2014_1.4866166.pdf
Open access
Access the document

APL-2014a.pdf
Open access
Access the document

document
Open access
Access the document

Millithaler_2014_1.4866166.pdf
Open access
Access the document

Optimized V-shape design of GaN nanodiodes ... BibTeX CSV Excel RIS

Files

Optimized V-shape design of GaN nanodiodes ...

BibTeX

CSV

Excel

RIS