Effect of polarization switching cycles ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Effect of polarization switching cycles on the dielectric response and Rayleigh constant in Pb0.4Sr0.6TiO3 thin films
Author(s) :
Li, Kui [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dong, Xianlin [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
R Émiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, Tao [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Chen, Ying [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Wang, Genshui [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Key Laboratory of Inorganic Functional Materials and Devices
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dong, Xianlin [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
R Émiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, Tao [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Chen, Ying [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Wang, Genshui [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Journal title :
Journal of Applied Physics
Pages :
064102
Publisher :
American Institute of Physics
Publication date :
2014
ISSN :
0021-8979
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
English abstract : [en]
Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, ...
Show more >Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically investigated. The results indicated that the polarization switching improves the extrinsic dielectric response and dielectric nonlinearity of these thin films because of the dielectric response of the oxygen vacancy to the applied electric field, while shows weak effect on the intrinsic dielectric and ferroelectric response. Moreover, the Rayleigh constant showed different evolutions in the films prepared at different substrate temperatures.Show less >
Show more >Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically investigated. The results indicated that the polarization switching improves the extrinsic dielectric response and dielectric nonlinearity of these thin films because of the dielectric response of the oxygen vacancy to the applied electric field, while shows weak effect on the intrinsic dielectric and ferroelectric response. Moreover, the Rayleigh constant showed different evolutions in the films prepared at different substrate temperatures.Show less >
Language :
Anglais
Popular science :
Non
Source :
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