Title :

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

Author(s) :

Faucher, Marc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Martin, G. [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
Friedt, J.M. [Auteur]
Ballandras, S. [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]

Conference title :

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013

City :

Prague

Country :

République tchèque

Start date of the conference :

2013

Book title :

Proceedings of 6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013

Publication date :

2013

English keyword(s) :

RF oscillator
SAW resonator
epitaxial GaN
silicon (111)
layered substrate

English abstract : [en]

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN ...
Show more >GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first functional two-port resonators have been designed and built on 1.8 μm thick GaN epitaxial layers grown on (111) Silicon. An analysis of the obtained results has been achieved and a set of elastic constants has been fitted to meet the best possible agreement between theory and experiments. Comparison between experimental and theoretical transfer functions has been also exploited to refine the estimation of the wave characteristics. An oscillator has been finally built using the obtained resonators to assess the interest of this material for this kind of application and to prepare future development on this basis.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL