Titre :

W-band RF-MEMS Dicke switch networks in a GaAs MMIC process

Auteur(s) :

Bint Reyaz, S. [Auteur]
Samuelsson, C. [Auteur]
Malmqvist, R. [Auteur]
Seok, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fryziel, Michel [Auteur]
Rolland, P.A. [Auteur]
Grandchamp, B. [Auteur]
Rantakari, P. [Auteur]
Vähä-Heikkilä, T. [Auteur]

Titre de la revue :

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS

Pagination :

2849-2853

Éditeur :

Wiley

Date de publication :

2013

ISSN :

0895-2477

Mot(s)-clé(s) en anglais :

Dicke switch network
Gallium Arsenide
monolithic microwave integrated circuit
radio frequency microelectro-mechanical-systems

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap ...
Lire la suite >A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0-level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3-1.7 dB (uncapped on-wafer), 1.6-2.0 dB (uncapped chips), and 1.8-2.7 dB (0-level packaged chips) at 70-96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer-level packaged W-band low loss/DC power and high isolation/linearity RF-MEMS Dicke switch circuits made in a GaAs foundry process.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL