Titre :

High frequency ultrasound, a tool for elastic properties measurement of thin films fabricated on silicon

Auteur(s) :

Campistron, Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Carlier, Julien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Saad, N. [Auteur]
Gao, J. [Auteur]
Toubal, Malika [Auteur]
Dupont, L. [Auteur]
Nassar, Georges [Auteur]
Nongaillard, Bertrand [Auteur]

Titre de la revue :

Advanced Materials Research

Pagination :

277-281

Éditeur :

Trans Tech Publications

Date de publication :

2011

ISSN :

1022-6680

Mot(s)-clé(s) en anglais :

High frequency transducers
Ultrasonic characterization
Ultrasound

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The main goal of this work is to develop an ultrasonic high frequency measurement method for the characterization of thin layers. The development of high frequency acoustic transducers for longitudinal waves and shear waves ...
Lire la suite >The main goal of this work is to develop an ultrasonic high frequency measurement method for the characterization of thin layers. The development of high frequency acoustic transducers for longitudinal waves and shear waves on silicon has made it possible to develop characterization of thin films deposited on this substrate. Three types of transducers have been achieved single crystal LiNbO3 Y+163° for shear waves generation or Y+36° for longitudinal waves, bonded and thinned on silicon substrate to achieve ultrasonic transducers in the frequency range between 300 MHz and 600 MHz thin films ZnO transducers have also been achieved thanks to sputtering technologies working in the frequency range between 1 GHz and 2.5 GHz. Using a network analyser which provide us the scattering S11 parameter measurement of the transducer versus the frequency and an inversion method, we deduce the elastic properties of films deposited on the surface wafer. Thanks to these transducers the acoustic properties of thin film materials such as SU-8 based nanocomposites (doped with TiO2, SrTiO3 or W nanoparticles) will be presented. In order to achieve mechanical impedance matching between silicon and water we control the mass of the embedded particles which provide a way to adjust the elastic properties of the characterized material. For another application an Indium metallic layer have been characterized in the high frequency range. We also use this method to characterize dielectric permittivity of the ZnO transducersLire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL