Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

Medjdoub, Farid; Tagro, Yoann; Zegaoui, Malek; Grimbert, B.; Danneville, François; DUCATTEAU, Damien; Rolland, Nathalie; Rolland, Paul-Alain

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1109/LED.2012.2205215

Title :

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

Author(s) :

Medjdoub, Farid [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tagro, Yoann [Auteur]
Zegaoui, Malek [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Grimbert, B. [Auteur]
Danneville, François [Auteur]

DUCATTEAU, Damien [Auteur]
Rolland, Nathalie [Auteur]

Rolland, Paul-Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Electron Device Letters

Pages :

1258-1260

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2012

ISSN :

0741-3106

English keyword(s) :

AlN/GaN heterostructure
high transconductance
low noise
Si substrate

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously ...
Show more >We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-1-dB minimum noise figure at 36 GHz with an associated gain of 7.5 dB has been achieved. To our knowledge, this is the best noise performance reported in the K a-band for any GaN deviceShow less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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