Title :

150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

Author(s) :

Lecavelier Des Etangs-Levallois, A. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Lesecq, Marie [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Poulain, L. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Tagro, Y. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Gloria, D. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Raynaud, C. [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Troadec, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]

Journal title :

IEEE Electron Device Letters

Pages :

1510-1512

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2011

ISSN :

0741-3106

English keyword(s) :

CMOS
organic substrate
plastic
thin film

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic ...
Show more >This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5× compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectivelyShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

ANR Project :

Plateforme de traitement laser pour l'électronique flexible multifonctionnelle

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL