Title :

Opening of simultaneous photonic and phononic band gap in two-dimensional square lattice periodic structure

Author(s) :

Bria, Driss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Jean Lamour [IJL]
Assouar, B. [Auteur]
Institut Jean Lamour [IJL]
Oudich, Mourad [Auteur]
Institut Jean Lamour [IJL]
Pennec (Admin), Yan [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vasseur, Jérôme [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Djafari-Rouhani, Bahram [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Journal of Applied Physics

Pages :

014507

Publisher :

American Institute of Physics

Publication date :

2011

ISSN :

0021-8979

HAL domain(s) :

Sciences de l'ingénieur [physics]/Optique / photonique

English abstract : [en]

We discuss two points related to the simultaneous existence of phononic and photonic band gaps in a two-dimensional crystal constituted by a square array of holes drilled in a matrix. In a first part, using the case of a ...
Show more >We discuss two points related to the simultaneous existence of phononic and photonic band gaps in a two-dimensional crystal constituted by a square array of holes drilled in a matrix. In a first part, using the case of a sapphire sample in the microwave range, we show that in addition to the phononic gap, an absolute photonic gap may be obtained making use of the high values as well as the anisotropy of the dielectric matrix elements in the microwave regime. In a second part, using the case of silicon in the telecom frequency range, we demonstrate that absolute photonic and phononic gaps may be obtained by making a combination of two crystals having slightly different filling factors. The calculations of the band structures and transmission coefficients were mainly computed using the finite difference time domain method.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL