A silicon nanowire ion-sensitive ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity
Author(s) :
Clement, N. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nishiguchi, K. [Auteur]
Dufrêche, Jean-François [Auteur]
Modélisation Mésoscopique et Chimie Théorique [LMCT]
Guérin, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fujiwara, A. [Auteur]
Vuillaume, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nishiguchi, K. [Auteur]
Dufrêche, Jean-François [Auteur]
Modélisation Mésoscopique et Chimie Théorique [LMCT]
Guérin, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fujiwara, A. [Auteur]
Vuillaume, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Applied Physics Letters
Pages :
014104-3
Publisher :
American Institute of Physics
Publication date :
2011
ISSN :
0003-6951
HAL domain(s) :
Chimie
English abstract : [en]
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. ...
Show more >We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq=1.6×10−2e/Hz1/2 at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.Show less >
Show more >We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq=1.6×10−2e/Hz1/2 at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.Show less >
Language :
Anglais
Popular science :
Non
Source :
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