Titre :

Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

Auteur(s) :

Bouregba, Rachid [Auteur]
Laboratoire de cristallographie et sciences des matériaux [CRISMAT]
Sama, N. [Auteur]
Soyer, Caroline [Auteur]
Poullain, Gilles [Auteur]
Laboratoire de Microélectronique et de Physique des Semiconducteurs [LaMIPS]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Journal of Applied Physics

Pagination :

104102-1-9

Éditeur :

American Institute of Physics

Date de publication :

2010

ISSN :

0021-8979

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. ...
Lire la suite >Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode-PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL