Imaging the operation of a carbon nanotube ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Imaging the operation of a carbon nanotube charge sensor at the nanoscale
Author(s) :
Brunel, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mayer, Alexandre [Auteur]
Facultés Universitaires Notre Dame de la Paix [FUNDP]
Melin, Thierry [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mayer, Alexandre [Auteur]
Facultés Universitaires Notre Dame de la Paix [FUNDP]
Melin, Thierry [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
ACS Nano
Pages :
5978-5984
Publisher :
American Chemical Society
Publication date :
2010
ISSN :
1936-0851
English keyword(s) :
carbon nanotube
field effect transistor
electrostatic force microscopy
Kelvin probe microscopy
charge injection
charge detection
field effect transistor
electrostatic force microscopy
Kelvin probe microscopy
charge injection
charge detection
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Carbon nanotube field effect transistors (CNTFETs) are of great interest for nanoelectronics applications such as nonvolatile memory elements (NVMEs) or charge sensors. In this work, we use a scanning-probe approach based ...
Show more >Carbon nanotube field effect transistors (CNTFETs) are of great interest for nanoelectronics applications such as nonvolatile memory elements (NVMEs) or charge sensors. In this work, we use a scanning-probe approach based on a local charge perturbation of CNTFET-based NVMEs and investigate their fundamental operation from combined transport, electrostatic scanning probe techniques and atomistic simulations. We experimentally demonstrate operating devices with threshold voltages shifts opposite to conventional gating and with almost unchanged hysteresis. The former effect is quantitatively understood as the emission of a delocalized image charge pattern in the nanotube environment, in response to local charge storage, while the latter effect points out the dominant dipolar nature of hysteresis in CNTFETs. We propose a simple model for charge sensing using CNTFETs, based on the redistribution of the nanotube image charges. This model could be extended to gas or biosensing, for example.Show less >
Show more >Carbon nanotube field effect transistors (CNTFETs) are of great interest for nanoelectronics applications such as nonvolatile memory elements (NVMEs) or charge sensors. In this work, we use a scanning-probe approach based on a local charge perturbation of CNTFET-based NVMEs and investigate their fundamental operation from combined transport, electrostatic scanning probe techniques and atomistic simulations. We experimentally demonstrate operating devices with threshold voltages shifts opposite to conventional gating and with almost unchanged hysteresis. The former effect is quantitatively understood as the emission of a delocalized image charge pattern in the nanotube environment, in response to local charge storage, while the latter effect points out the dominant dipolar nature of hysteresis in CNTFETs. We propose a simple model for charge sensing using CNTFETs, based on the redistribution of the nanotube image charges. This model could be extended to gas or biosensing, for example.Show less >
Language :
Anglais
Popular science :
Non
Source :