Atomistic simulation of plasticity in silicon nanowires

Cleri, Fabrizio; Ishida, T.; Collard, D.; Fujita, H.

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1063/1.3501987

Title :

Atomistic simulation of plasticity in silicon nanowires

Author(s) :

Cleri, Fabrizio [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ishida, T. [Auteur]
The University of Tokyo [UTokyo]
Collard, D. [Auteur]
Laboratory for Integrated Micro Mechatronics Systems [LIMMS]
Fujita, H. [Auteur]
The University of Tokyo [UTokyo]

Journal title :

Applied Physics Letters

Pages :

153106

Publisher :

American Institute of Physics

Publication date :

2010

ISSN :

0003-6951

HAL domain(s) :

Physique [physics]/Mécanique [physics]/Mécanique des matériaux [physics.class-ph]

English abstract : [en]

We study the tensile deformation of polycrystalline Si nanowires by means of molecular dynamics simulations. The initial microstructure is composed by a network of nanocrystals glued together by a thin layer of amorphous ...
Show more >We study the tensile deformation of polycrystalline Si nanowires by means of molecular dynamics simulations. The initial microstructure is composed by a network of nanocrystals glued together by a thin layer of amorphous material. Atomistic simulations could clearly identify liquidlike flow in the constrained amorphous Si as the responsible for the observed elongation. After this first stage of nearly constant-stress flow, a necking instability sets in, eventually leading to fracture, at the point when the nanowire diameter becomes comparable to the size of the nanocrystalsShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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