Terahertz response of InGaAs field effect ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Terahertz response of InGaAs field effect transistors in quantizing magnetic fields
Author(s) :
Klimenko, O.A. [Auteur]
Groupe d'étude des semiconducteurs [GES]
P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] [LPI RAS]
Mityagin, Y.A. [Auteur]
P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] [LPI RAS]
Videlier, H. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Teppe, F. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Dyakonova, N.V. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Consejo, C. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Bollaert, Sylvain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Murzin, V.N. [Auteur]
P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] [LPI RAS]
Knap, W. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Groupe d'étude des semiconducteurs [GES]
P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] [LPI RAS]
Mityagin, Y.A. [Auteur]
P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] [LPI RAS]
Videlier, H. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Teppe, F. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Dyakonova, N.V. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Consejo, C. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Bollaert, Sylvain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Murzin, V.N. [Auteur]
P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow] [LPI RAS]
Knap, W. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Journal title :
Applied Physics Letters
Pages :
022111
Publisher :
American Institute of Physics
Publication date :
2010
ISSN :
0003-6951
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. ...
Show more >Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows explaining the dominant physical mechanism responsible for strong oscillations observed in the transistor THz photoresponse. The results indicate also a serious discrepancy between experimental data and existing theoretical model.Show less >
Show more >Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows explaining the dominant physical mechanism responsible for strong oscillations observed in the transistor THz photoresponse. The results indicate also a serious discrepancy between experimental data and existing theoretical model.Show less >
Language :
Anglais
Popular science :
Non
Source :
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